IRF6655TR1【PDF 1/11 页】MOSFET N-CH 100V DIRECTFET-SH

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录443

[1页]2页 3页 4页 5页

PD - 96926D

IRF6655

DirectFET ? Power MOSFET ?

l RoHS compliant containing no lead or bromide ?

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible ?

l Ultra Low Package Inductance

Typical values (unless otherwise specified)

V DSS V GS R DS(on)

100V max ±20V max 53m ? @ 10V

Q g tot Q gd V gs(th)

l Optimized for High Frequency Switching ?

8.7nC

2.8nC

3.9V

l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Ideal for Control FET sockets in 36V – 75V in

Synchronous Buck applications

l Low Conduction Losses

l Compatible with existing Surface Mount Techniques ?

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?

DirectFET ? ISOMETRIC

SQ SX ST

MQ MX MT

Description

The IRF6655 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the

lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

80%.

The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in

non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side

synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-

mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high

performance isolated DC-DC converters.

Absolute Maximum Ratings

Parameter

Max.

Units

V DS

V GS

I D @ T A = 25°C

I D @ T A = 70°C

I D @ T C = 25°C

I DM

E AS

I AR

200

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V GS @ 10V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

12.0

100

±20

4.2

3.4

5.0

180

160

140

120

100

T J = 125°C

I D = 5.0A

10.0

8.0

6.0

ID= 5.0A

VDS= 80V

VDS= 50V

VDS= 20V

4.0

T J = 25°C

2.0

0.0

VGS, Gate -to -Source Voltage (V)

QG Total Gate Charge (nC)

Notes:

Fig 1. Typical On-Resistance Vs. Gate Voltage

Fig 2. Typical On-Resistance Vs. Gate Voltage

? Click on this section to link to the appropriate technical paper.

? Click on this section to link to the DirectFET MOSFETs

? Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

? Starting T J = 25°C, L = 0.89mH, R G = 25 ? , I AS = 5.0A.

? Surface mounted on 1 in. square Cu board, steady state.

? T C measured with thermocouple mounted to top (Drain) of part.

11/16/05

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式